PUBLISHED CONFERENCE
1. S Nath, Sudipta. Ghosh and S K Sarkar, “A Novel Approach to Discrete Particle Swarm Optimization for Efficient Routing in VLSI Design”, 4th IEEE International Conference on Reliability, Infocom Technologies and Optimization, Noida, India, 2014.
2. Sudipta. Ghosh, S. Nath, R. Biswas, P. Venkateswaran, J. K. Sing and S. K. Sarkar, "PSO Variants and its Comparison with Firefly Algorithm in Solving VLSI Global Routing Problem," 2018 IEEE Electron Devices Kolkata Conference (EDKCON), Kolkata, India, 2018, pp. 513-518, doi: 10.1109/EDKCON.2018.8770397.
3. Sudipta Ghosh, P. Pachal, R. Kumar, S. Kundu, J. Ghosh and S. K. Sarkar, "Performance enhancement of p-n-p-n TFET with spacer induced hetero-dielctric gate oxide" 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), Kolkata, India, 2020, pp. 1-5, doi: 10.1109/VLSIDCS47293.2020.9179943.
4. Sudipta Ghosh, S. Kundu, S. Guha, J. Ghosh, P. Pachal and S. K. Sarkar, "Effect of Body Thickness on Device Performance of Graded Channel Tri-Metal Double Gate Stack Gate TFET," 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), Kolkata, India, 2020, pp. 427-431, doi: 10.1109/VLSIDCS47293.2020.9179899.
5. Sudipta. Ghosh, S. Bose, W. Anwar, M. Banerjee, P. Venkateswaran and S. K. Sarkar, "DC and Analog/RF Performance Analysis of Gate-Drain Underlapped and Channel Engineered TFET," 2022 IEEE VLSI Device Circuit and System (VLSI DCS), 2022, pp. 70-74, doi: 10.1109/VLSIDCS53788.2022.9811483.
6. Sudipta. Ghosh, A. Jana, A. K. Agnihotri, S. Kundu, D. Das and S. K. Sarkar, "DC and Analog/RF Performance Comparison of Renovated GAA JLFET Structures," 2022 IEEE VLSI Device Circuit and System (VLSI DCS), 2022, pp. 80-84, doi: 10.1109/VLSIDCS53788.2022.9811488.
7. S Misra, S Dhar, A Sarkar, S Sarkar, AS Chakraborty, S Roy, Sudipta Ghosh, “Impact of Trap Charge effects on the Performance of 2D material-based FET”, 2022 IEEE International Conference of Electron Devices Society Kolkata.
8. SS Das, Sudipta Ghosh, SK Sarkar, “Performance Analysis of a Heterojunction Dual Gate Ferroelectric Tunnel FET with Variation of Gate Stack Dielectric combination”, 2024 IEEE International Conference of Electron Devices Society Kolkata.